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N-type silicon rods

  • Established process, N-type high-efficiency technology

  • Advanced equipment, boosting cost reduction and efficiency improvement

  • 6S lean management, ensuring excellent quality

  • Large size, low silicon consumption, high efficiency, and available for customization

  • Minority carrier lifetime:≥800us

  • Resistivity:0.3-2.1Ω.cm

  • Carbon content:≤0.5×1017atoms/cm3

  • Doping mode:≤6.5×1017atoms/cm3

Dimension

Material properties

ItemSpecificationTesting method
Growth mode CZ /
Crystal orientation <100>±3° X-ray diffraction method
Conductivity type N type P/N tester
Dislocation density/cm² ≤500 X-ray diffractometer (ASTM F26-1987)
Item Growth mode
Specification CZ
Testing method /
Item Crystal orientation
Specification <100>±3°
Testing method X-ray diffraction method
Item Conductivity type
Specification N type
Testing method P/N tester
Item Dislocation density/cm²
Specification ≤500
Testing method X-ray diffractometer (ASTM F26-1987)

Electrical properties

ItemSpecificationTesting method
Oxygen content ≤6.5×1017atoms/cm3 Fourier transform infrared spectrometer
Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer
Resistivity 0.3-2.1Ω.cm Automatic silicon wafer detection equipment
Minority carrier lifetime ≥800us Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient Transient photoconductance decay method (with injection level: 1E15 cm-3)
Item Oxygen content
Specification ≤6.5×1017atoms/cm3
Testing method Fourier transform infrared spectrometer
Item Carbon content
Specification ≤0.5×1017atoms/cm3
Testing method Fourier transform infrared spectrometer
Item Resistivity
Specification 0.3-2.1Ω.cm
Testing method Automatic silicon wafer detection equipment
Item Minority carrier lifetime
Specification ≥800us
Testing method Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient Transient photoconductance decay method (with injection level: 1E15 cm-3)

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