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Monocrystalline silicon rods Monocrystalline silicon rods

N-type silicon rods N-type silicon rods

P-type silicon rods P-type silicon rods

Monocrystalline silicon wafers Monocrystalline silicon wafers

N-type silicon wafers N-type silicon wafers

P-type silicon wafers P-type silicon wafers

Half-sliced silicon wafer Half-sliced silicon wafer
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N-type silicon rods

Established process, N-type high-efficiency technology
Advanced equipment, boosting cost reduction and efficiency improvement
6S lean management, ensuring excellent quality
Large size, low silicon consumption, high efficiency, and available for customization

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Minority carrier lifetime：≥800us
Resistivity：0.3-2.1Ω.cm
Carbon content：≤0.5×10¹⁷atoms/cm³
Doping mode：≤6.5×10¹⁷atoms/cm³

Dimension

182 silicon rods

Dimension ：182*182mm

Conductivity type ：N-type phosphorus doped

Customized silicon rods
210 silicon rods

Dimension ：210*210mm

Conductivity type ： N-type phosphorus doped

Customized silicon rods

Material properties

Item	Specification	Testing method
Growth mode	CZ	/
Crystal orientation	＜100＞±3°	X-ray diffraction method
Conductivity type	N type	P/N tester
Dislocation density/cm²	≤500	X-ray diffractometer (ASTM F26-1987)


Item	Growth mode
Specification	CZ
Testing method	/
Item	Crystal orientation
Specification	＜100＞±3°
Testing method	X-ray diffraction method
Item	Conductivity type
Specification	N type
Testing method	P/N tester
Item	Dislocation density/cm²
Specification	≤500
Testing method	X-ray diffractometer (ASTM F26-1987)

Electrical properties

Item	Specification	Testing method
Oxygen content	≤6.5×10¹⁷atoms/cm³	Fourier transform infrared spectrometer
Carbon content	≤0.5×10¹⁷atoms/cm³	Fourier transform infrared spectrometer
Resistivity	0.3-2.1Ω.cm	Automatic silicon wafer detection equipment
Minority carrier lifetime	≥800us	Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient Transient photoconductance decay method (with injection level: 1E15 cm-3)


Item	Oxygen content
Specification	≤6.5×10¹⁷atoms/cm³
Testing method	Fourier transform infrared spectrometer
Item	Carbon content
Specification	≤0.5×10¹⁷atoms/cm³
Testing method	Fourier transform infrared spectrometer
Item	Resistivity
Specification	0.3-2.1Ω.cm
Testing method	Automatic silicon wafer detection equipment
Item	Minority carrier lifetime
Specification	≥800us
Testing method	Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient Transient photoconductance decay method (with injection level: 1E15 cm-3)

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