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Monocrystalline silicon rods Monocrystalline silicon rods

N-type silicon rods N-type silicon rods

P-type silicon rods P-type silicon rods

Monocrystalline silicon wafers Monocrystalline silicon wafers

N-type silicon wafers N-type silicon wafers

P-type silicon wafers P-type silicon wafers

Half-sliced silicon wafer Half-sliced silicon wafer
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P-type silicon wafers

Automated production line, customized products
Intelligent management, high reliability
Established process, low decay process
Stable quality, high satisfaction

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Minority carrier lifetime：≥70us
Resistivity：0.4-1.1Ω.cm
Carbon content：≤0.5×10¹⁷atoms/cm³
Oxygen content：≤7.5×10¹⁷atoms/cm³

Dimension

182 silicon wafers

Dimension ：182±0.25mm

Conductivity type ： P-type gallium doped

Customized silicon wafers
210 silicon wafers

Dimension ：210±0.25mm

Conductivity type ： P-type gallium doped

Customized silicon wafers

Material properties

Item	Specification	Testing method
Growth mode	CZ	/
Crystal orientation	＜100＞±3°	X-ray diffraction method
Conductivity type	P type	P/N tester
Dislocation density/cm²	≤500	X-ray diffractometer (ASTM F26-1987)


Item	Growth mode
Specification	CZ
Testing method	/
Item	Crystal orientation
Specification	＜100＞±3°
Testing method	X-ray diffraction method
Item	Conductivity type
Specification	P type
Testing method	P/N tester
Item	Dislocation density/cm²
Specification	≤500
Testing method	X-ray diffractometer (ASTM F26-1987)

Electrical properties

Item	Specification	Testing method
Oxygen content	≤7.5×10¹⁷atoms/cm³	Fourier transform infrared spectrometer
Carbon content	≤0.5×10¹⁷atoms/cm³	Fourier transform infrared spectrometer
Resistivity	0.4-1.1Ω.cm	Automatic silicon wafer detection equipment
Minority carrier lifetime	≥70us	Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient photoconductance decay method (with injection level: 1E15 cm-3)


Item	Oxygen content
Specification	≤7.5×10¹⁷atoms/cm³
Testing method	Fourier transform infrared spectrometer
Item	Carbon content
Specification	≤0.5×10¹⁷atoms/cm³
Testing method	Fourier transform infrared spectrometer
Item	Resistivity
Specification	0.4-1.1Ω.cm
Testing method	Automatic silicon wafer detection equipment
Item	Minority carrier lifetime
Specification	≥70us
Testing method	Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient photoconductance decay method (with injection level: 1E15 cm-3)

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