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P-type silicon wafers

  • Automated production line, customized products

  • Intelligent management, high reliability

  • Established process, low decay process 

  • Stable quality, high satisfaction

  • Minority carrier lifetime:≥70us

  • Resistivity:0.4-1.1Ω.cm

  • Carbon content:≤0.5×1017atoms/cm3

  • Oxygen content:≤7.5×1017atoms/cm3

Dimension

Material properties

ItemSpecificationTesting method
Growth mode CZ /
Crystal orientation <100>±3° X-ray diffraction method
Conductivity type P type P/N tester
Dislocation density/cm² ≤500 X-ray diffractometer (ASTM F26-1987)
Item Growth mode
Specification CZ
Testing method /
Item Crystal orientation
Specification <100>±3°
Testing method X-ray diffraction method
Item Conductivity type
Specification P type
Testing method P/N tester
Item Dislocation density/cm²
Specification ≤500
Testing method X-ray diffractometer (ASTM F26-1987)

Electrical properties

ItemSpecificationTesting method
Oxygen content ≤7.5×1017atoms/cm3 Fourier transform infrared spectrometer
Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer
Resistivity 0.4-1.1Ω.cm Automatic silicon wafer detection equipment
Minority carrier lifetime ≥70us Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient photoconductance decay method (with injection level: 1E15 cm-3)
Item Oxygen content
Specification ≤7.5×1017atoms/cm3
Testing method Fourier transform infrared spectrometer
Item Carbon content
Specification ≤0.5×1017atoms/cm3
Testing method Fourier transform infrared spectrometer
Item Resistivity
Specification 0.4-1.1Ω.cm
Testing method Automatic silicon wafer detection equipment
Item Minority carrier lifetime
Specification ≥70us
Testing method Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient photoconductance decay method (with injection level: 1E15 cm-3)

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