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Half-sliced silicon wafer

  • Leading technology, more reliable and efficient

  • Advanced equipment, boosting cost reduction and efficiency improvement

  • Personalized and customized services

  • Minority carrier lifetime:≥800us

  • Resistivity:0.3-2.1Ω.cm

  • Carbon content:≤1ppma

  • Oxygen content:≤14ppma

Dimension

Material properties

ItemSpecification
Growth mode CZ
Crystal orientation <100>±3°
Conductivity type N type
Dislocation density ≤500
Item Growth mode
Specification CZ
Item Crystal orientation
Specification <100>±3°
Item Conductivity type
Specification N type
Item Dislocation density
Specification ≤500

Electrical properties

ItemSpecification
Oxygen content ≤14ppma
Carbon content ≤1ppma
Resistivity 0.3-2.1Ω.cm
Minority carrier lifetime ≥800us
Item Oxygen content
Specification ≤14ppma
Item Carbon content
Specification ≤1ppma
Item Resistivity
Specification 0.3-2.1Ω.cm
Item Minority carrier lifetime
Specification ≥800us

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